| 摘要 |
<p>A method for manufacturing a bipolar transistor which includes a step of preparing a semiconductor substrate of first conductivity type, a step of sequentially forming a thin first insulating film, an electrically conducting film containing a second conductivity type impurity, and a second insulating film on the semiconductor substrate, a step of forming an opening by anisotropically etching the second insulating film and the conductive film in selective manner, a step of exposing the semiconductor surface by etching the first insulating film, a step of depositing a base layer of the second conductivity type on the surface of the semiconcuctor substrate exposed in the opening by epitaxial deposition. <IMAGE></p> |
