TURN-OFF SEMICONDUCTOR COMPONENT

摘要

In a turn-off semiconductor component of the GTO type having a direct pressure contact, a balancing of the local pressure distribution in the region of the cathode fingers (7) which results in an improved resistance to load variation and also in an extension of the permissible pressure range is achieved by structurally matching the anode metallisation (4) to the gate-cathode structure on the cathode side. ……