| 摘要 |
<p>PURPOSE:To perform an excellent display with high picture element density by shaping a semiconductor almost in a parallelogram and crossing obliquely a couple of two opposite sides (oblique side) of the semiconductor and data lines provided thereupon. CONSTITUTION:When a matrix circuit is formed, transparent picture element electrodes 1 are formed with a pattern, scanning lines 2 as gates are formed on a transparent substrate with a pattern, and an insulating layer and a semiconductor layer are formed on the scanning lines 2 and then the semiconductor in the parallelogram shape is formed; and picture element electrodes 4 as a source or drain electrodes and data lines 5 are formed thereupon of a metallic thin film. The picture element electrodes 4 are connected to the transparent picture element electrodes 1 and an orientation film is provided; and the direction of the rubbing treatment of the orientation film is made coincident with the direction (arrow A) of the oblique sides of the semiconductor 3, i.e. sides crossing the data lines slantingly to suppress the generation of a defect in orientation. Then, a TFT element operates so that currents flow from the respective data lines 5 to the respective transparent electrodes 1 through the picture element electrodes according to gate voltages applied to the scanning lines 2.</p> |
