发明名称 X-ray mask and semiconductor device manufacturing method using the same.
摘要 An X-ray mask has a mask frame in which the central portion thereof is removed to form a concentric hole, and four grooves are radially formed in the surface of junction with a silicon substrate. On the other hand, a permeable film portion on which a pattern is provided is formed in the central portion of the silicon substrate, four through holes being formed in the perimeter of the permeable film portion in correspondence with the grooves. During exposure of a wafer, when the side of the permeable film portion is moved toward the wafer and brought close to it, the gas present between the wafer and the X-ray mask passes through the through holes and the grooves and flows from one side of the X-ray mask on which the permeable film portion is provided to the other side of the X-ray mask. Thus the pressure between the wafer and the X-ray mask is not increased. This permits an increase in the speed of movement of the X-ray mask without breaking the permeable film portion and improvement of the productivity of an exposure device. <IMAGE>
申请公布号 EP0532211(A1) 申请公布日期 1993.03.17
申请号 EP19920307864 申请日期 1992.08.28
申请人 CANON KABUSHIKI KAISHA 发明人 KORENAGA, NOBUSHIGE;MAEHARA, HIROSHI
分类号 G03F1/22;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F1/22
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