| 发明名称 |
A SEMICONDUCTOR DEVICE AND A PRODUCTION METHOD THEREOF |
| 摘要 |
In a semiconductor device having a gate electrode and an insulating film covering the gate electrode on a compound semiconductor substrate, the stress in the gate metal and the stress produced by the insulating film on the gate electrode cancel so that threshold voltage is not a function of gate orientation relative to the crystalline directions of the substrate. |
| 申请公布号 |
GB2230898(B) |
申请公布日期 |
1993.03.17 |
| 申请号 |
GB19890026740 |
申请日期 |
1989.11.27 |
| 申请人 |
* MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YASUTAKA * KOHNO |
| 分类号 |
H01L21/3205;H01L21/28;H01L21/285;H01L21/318;H01L21/338;H01L23/52;H01L29/47;H01L29/812 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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