| 摘要 |
Method for coating a substrate formed of a sintered silicon nitride based material with a film of diamond by a gas phase synthesis technique including a first step of applying a film having a thickness of 0.5 to 2.0 mu m at a temperature not higher than a temperature at which grain boundary components of the substrate volatilize, and a second step of synthesizing the film of diamond-and-the-like to a thickness of 5 to 100 mu at a temperature which expedites synthesis of the film of diamond. |
