An ion implantation apparatus.

摘要

An ion implantation apparatus having a plasma source (25) for generating ions, an ion accelerator (9) for accelerating the generated ions, and a substrate holder (11) provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer (14) having an electric field and a magnetic field, thereby controlling a dose of the ions. <IMAGE>