发明名称 |
Thermally processing semiconductor wafers at non-ambient pressures |
摘要 |
A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.
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申请公布号 |
US5194401(A) |
申请公布日期 |
1993.03.16 |
申请号 |
US19920873483 |
申请日期 |
1992.04.22 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ADAMS, DAVID V.;ANDERSON, ROGER N.;DEACON, THOMAS E. |
分类号 |
C23C16/44;C23C16/48 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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