Erasable, multiple level logic optical memory disk

摘要

A process for preparing a multiple level logic optical memory disks which are erasable upon heating when ion-beam hydrogenation is used for writing informatin on the disk. The process comprises depositing an amorphous film selected from the group consisting of silicon hydride, silicon carbon hydride and silicon nitrogen hydride on a glass substrate using plasma enhanced chemical vapor deposition at temperatures sufficient to ensure good adhesion and high film quality and an optical bandgap of between aboout 1.55 and about 2.0 eV; writing information on these disks by using a laser beam to selectively heat spots of the film to expel hydrogen and change the bandgap and optical absorption of the film; and using a laser beam at a sufficient nm wavelength in order to detect information stored on these disks.