| 摘要 |
<p>PURPOSE:To enable an increase in precision by securing a sufficient capacitance even when the area of a storage capacitor of an active matrix substrate is decreased. CONSTITUTION:A single perovskite type oxide or a solid solution of a plurality of perovskite type oxides are used for an insulating film 5 constituting a storage capacitor 12. Since such a material has a markedly large dielectric constant, even some more decreases in the area of the storage capacitor 12 than that of a storage capacitor of prior art construction enable a capacitor itself to be equal to or over a prior art. Even when an insulating film 5 is thickened up to such a thickness as to give no trouble to an insulating property, a sufficient capacitance can be secured. This process can miniaturize the storage capacitor 12 in a state that leakage current is prevented from occurring or the like and dispense with a laminated structure.</p> |
