| 摘要 |
<p>PURPOSE:To obtain a sense amplifier capable of obtaining high-speed and stable operation at the time of changing an address, and the charging of a column line, and operating at a high speed even at a low power supply voltage. CONSTITUTION:The inputs of the third MOSFET Q3 and the second invertor INV2 are connected with the input COJ of a sense amplifier, and the output of the invertor INV2 is connected to the gate of the third MOSFET Q3, and the drain of the MOSFET Q3 is connected to a power source through the fourth MOSFET Q4. The output ATD of an address transition detecting circuit 4 is connected to the gate of the MOSFET Q4. Thus, when the selected memory cell is non-conductive, the charging time of the column line is speeded up, thereby the high-speed operation can be attained. And also, the high-speed operation can be attained even at the low power supply voltage.</p> |
