发明名称 Protection of the output stages of an integrated circuit against electrostatic discharges
摘要 In a MOS integrated circuit including two output stages, a device for protection against overvoltages comprises a protection element (Ep1) the input and the output of which are connected respectively to the output and the input of an output stage and which, for a potential difference at its terminals which is higher in absolute value than a triggering threshold, imposes on the output the voltage available on the input, to within the triggering threshold. In one improvement, a resistor is placed in series between the circuit element which controls the output stage and the input of the output stage. <IMAGE>
申请公布号 FR2681193(A1) 申请公布日期 1993.03.12
申请号 FR19910011007 申请日期 1991.09.05
申请人 SGS THOMSON MICROELECTRONICS SA 发明人 TAILLIET FRANCOIS
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
主权项
地址