| 摘要 |
PURPOSE:To enable the formation of an amorphous semiconductor thin film of good quality at a low temperature of 300 deg.C or below. CONSTITUTION:After forming a gate electrode 2, gate insulating film 3, source region 6 and drain region 7, a non-doped a-Si:H thin film 8 is formed on the whole surface by the plasma CVD method at a low temperature of 300 deg.C or below. The resulting a-Si:H thin film 8 is fused by pulse laser light L irradiation and then solidified. Thus, the a-Si:H thin film 9 is formed only on the gate insulating film 3 between the source region 6 and the drain region 7. This a-Si:H thin film 9 is used for channel region. Then, this thin film 9 is hydrogenated by the hydrogen plasma treatment. |
