| 摘要 |
PURPOSE:To prevent the deterioration of characteristics such as short-circuit photocurrent, photoelectromotive force and fill factor by distributing tin atoms in a glass support in such manner that the tin atoms decrease inward from the surface with a transparent substrate formed thereon. CONSTITUTION:A p-type layer 106, i-type layer 105, n-type layer 104 and conductive layer 110 composed of unsingle crystalline silicon semiconductor are laminated on a substrate with transparent electrode 107 constituted by the formation on a glass support 101 of the transparent electrode 107 formed by at least one layer out of tin oxide layer and indium-tin oxide layer. In this case, tin atoms are distributed in the glass support 101 in the manner of decreasing inward from the surface with the transparent electrode 107 formed thereon. Thus, even in a high-temperature high-humidity environment and even by an ultraviolet-light irradiation for a long period of time, it is possible to prevent the deterioration of characteristics such as short-circuit photocurrent, photoelectromotive force and fill factor in a photovoltaic element. |
