| 摘要 |
<p>PURPOSE:To prevent the generation of a short-circuit between the gate electrode and source electrode of an active matrix and to increase the numerical aperture by forming the additional capacity with a transparent conductive film. CONSTITUTION:A transparent conductive film 102 is coated with a metallic film 104, and the metallic film 104 of the gate electrode wiring is anodized. After anodization, the first insulating film 105 and metallic film 104 on the transparent conductive film 102 are removed when an additional capacity 113 is to be formed, hence the additional capacity 113 is formed between the transparent conductive film 102 not coated with the first insulating film 105 and metallic film 104 and a picture element electrode 112. Since the one electrode forming the additional capacity 113 consists of the transparent conductive film 102, the picture element 112 is not shaded. Meanwhile, as the gate electrode constituting a thin-film transistor is coated by the first insulating film formed by anodizing the upper part of the metallic film, the insulation characteristic between the gate electrode and source electrode is improved.</p> |
