| 摘要 |
The memory device having a function for substituting good redundant cells for poor cells comprises a normal cell array (100), a spare cell array (200) for substituting good cells for poor cells when the normal memory cells have defects, and a block selection unit (70) connected to the normal cell array (100) and spare cell array (200) to input block selection information. The spare cell array is drived independently of the normal cell array according to the output signal of the block selection unit (70). The spare cell array includes cells, a spare precharge circuit (11) connected to spare column line to precharge the spare column line, a spare dummy cell (21), a spare sense amplifier (31) and a spare write driver.
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