MANUFACTURE OF NONVOLATILE SEMICONDUCTOR MEMORY,申请号JP19910246689-传众专利搜索

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发明名称	MANUFACTURE OF NONVOLATILE SEMICONDUCTOR MEMORY
摘要
申请公布号	JPH0563206(A)	申请公布日期	1993.03.12
申请号	JP19910246689	申请日期	1991.08.31
申请人	NEC CORP	发明人	INOUE TATSURO
分类号	H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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