Semiconductor memory device fitted with a storage electrode containing multiple micro-clefts and/or multiple micro-cylinders

摘要

a) Semiconductor memory device fitted with a storage electrode containing multiple micro-clefts and/or multiple micro-cylinders. b) Capacitor characterised in that the first electrode comprises a certain number of micro-clefts and/or micro-cylinders (70) formed on a predetermined surface of the conduction layer. c) Semiconductor memory device fitted with a storage electrode containing multiple micro-clefts and/or multiple micro-cylinders. <IMAGE>