发明名称 METHOD OF FORMING PATTERN USING LIFT-OFF METHOD
摘要 PURPOSE:To prevent the generation of a bridge-shaped or protrusion-shaped residual, which is generated by adhesion of a patterning film to the side surfaces of a resist film, and to prevent the generation of a short-circuit trouble or an interference by a method wherein a light etching process is performed to the patterning film before the removing process of the resist film. CONSTITUTION:A patterning film 2 is formed on the surface of a substrate 10 with a resist film 1 formed into a prescribed form previously thereon in such a way as to cover also the film 11 along with the substrate surface. A light etching is performed on the film 2. Edge parts 2a, which are respectively adhered on the side surfaces 1a of the film 1, of the film 2 are removed by this light etching and an unnecessary part 2b, which is formed on the film 1, of the film 2 is separated from the film 2. After that, the removing process of the film 1 is performed and the unnecessary part 2b is removed. Accordingly, the obtainable film 2 is formed into a film of a completely desired form and the generation of such a short-circuit trouble or an interference as to generate in a conventional method can be prevented.
申请公布号 JPH0562948(A) 申请公布日期 1993.03.12
申请号 JP19910244036 申请日期 1991.08.30
申请人 STANLEY ELECTRIC CO LTD 发明人 IMASHIRO SHINICHI;SANO HIROYUKI
分类号 G03F7/26;H01L21/302;H01L21/3065 主分类号 G03F7/26
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