发明名称 |
VERFAHREN ZUR HERSTELLUNG VON ISOLATORSCHICHTEN AUS SILYLIERTEN POLYSILSESQUIOXANEN AUF ELEKTRONISCHEN GEDRUCKTEN SCHALTUNG. |
摘要 |
<p>A lower alkyl polysilsesquioxane having a general formula …<CHEM>… wherein R is lower alkyl, preferably CH3 or C2H5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20 DEG C to -50 DEG C to form an organic solution thereof: (b) hydrolysing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20 DEG C to -50 DEG C under an inert gas pressurised at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60 DEG C to 100 DEG C under an inert gas pressurised at 1,000 to 3,000 Pa. …<??>Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula …<CHEM>… wherein R<1> and R<2> are each selected from alkyl and phenyl (preferably methyl or ethyl), and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.</p> |
申请公布号 |
DE3587041(D1) |
申请公布日期 |
1993.03.11 |
申请号 |
DE19853587041 |
申请日期 |
1985.10.31 |
申请人 |
FUJITSU LTD., KAWASAKI, KANAGAWA, JP |
发明人 |
FUKUYAMA, SHUN-ICHI, ATSUGI-SHI KANAGAWA 243, JP;YONEDA, YASUHIRO, MACHIDA-SHI TOKYO 194, JP;MIYAGAWA, MASASHI;NISHII, KOTA, ISEHARA-SHI KANAGAWA 259-11, JP;MATSUURA, AZUMA, ATSUGI-SHI KANAGAWA 243, JP |
分类号 |
C08G77/06;H01B3/46;H01L21/312;H01L21/48;H01L23/498;H05K1/00;(IPC1-7):C08G77/06 |
主分类号 |
C08G77/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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