Thermoelectric semiconductor generator - uses several dopants in p-conductive and=-or n-conductive shanks

摘要

The generator has an n-conductive shank and a p-conductive shank, whose basic material is doped by at least one substance. They are electrically interconnected at their hot side. Several doping substances are used in the p-conductive and/or n-conductive semiconductor shanks. Pref. iron disilicate (FeSi2) is used as the basic material for the semiconductor shanks. For the shank doping in p-conductive sense a combination of Al, Cn, Ga, and Mu is typically used, with Cn and Mu replacing corresp. quantity of Fe, while Al and Ga replacing corresp. quantity of Si. USE/ADVANTAGE - For thermoelectric semiconductor generators, with facility for simultaneous adjustment of several thermoelectric properties in greater band width.