发明名称 Germanium-silicon thermal element manufacturing process - milling ingredients mixed with dopant, followed by isostatic cold compression and heating at specified temp.
摘要 Thermal elements particularly for space travel are made by milling the at least 95 percent pure germanium and silicon materials to a size of less than 10 microns, such as 5 microns, mixed with a dopant then compressed using an isostatic cold compression method followed by heating to a temperature between 1050 and 1300 degrees C. The doping substance can be borium, arsenic, antimony, phosphorous, gallium phosphide and/or highly doped silicon. When doped with arsenic or gallium phosphide, after weighing, the mixture is melted. The elements are milled using a fluid such as n-hexane
申请公布号 DE4129871(A1) 申请公布日期 1993.03.11
申请号 DE19914129871 申请日期 1991.09.07
申请人 WEBASTO AG FAHRZEUGTECHNIK, 8035 STOCKDORF, DE 发明人 GROSS, ERWIN, 7550 RASTATT, DE;STOEHRER, ULRICH;IOANNIDIS, KIRIAKOS, 7500 KARLSRUHE, DE
分类号 H01L35/22 主分类号 H01L35/22
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