发明名称 |
Germanium-silicon thermal element manufacturing process - milling ingredients mixed with dopant, followed by isostatic cold compression and heating at specified temp. |
摘要 |
Thermal elements particularly for space travel are made by milling the at least 95 percent pure germanium and silicon materials to a size of less than 10 microns, such as 5 microns, mixed with a dopant then compressed using an isostatic cold compression method followed by heating to a temperature between 1050 and 1300 degrees C. The doping substance can be borium, arsenic, antimony, phosphorous, gallium phosphide and/or highly doped silicon. When doped with arsenic or gallium phosphide, after weighing, the mixture is melted. The elements are milled using a fluid such as n-hexane
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申请公布号 |
DE4129871(A1) |
申请公布日期 |
1993.03.11 |
申请号 |
DE19914129871 |
申请日期 |
1991.09.07 |
申请人 |
WEBASTO AG FAHRZEUGTECHNIK, 8035 STOCKDORF, DE |
发明人 |
GROSS, ERWIN, 7550 RASTATT, DE;STOEHRER, ULRICH;IOANNIDIS, KIRIAKOS, 7500 KARLSRUHE, DE |
分类号 |
H01L35/22 |
主分类号 |
H01L35/22 |
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