| 摘要 |
<p>PURPOSE:To minimize a crack at the cutting off time, and to reduce the generation of a wrong device by a method wherein a portion without alumina films is provided within a specific distance from the scrive lines of the semiconductor wafers that the alumina film is formed in the scrive region. CONSTITUTION:An Al2O3 film 3 is formed in the scrive region of a semiconductor wafer 1 for an electric characteristic, a manufacture process, or a coot reduction. The portion without the Al2O3 film is arranged symmetrically at the both sides from the scrive control line 4 as a symmetric, pallarel and a strip region 5. In this case, the width of almina film 3 in the scrive region 2 is determined less than 100mu. The portion without the alumina film may be arranged in a check pattern. Thus, the generation of wrong device can be prevented.</p> |
