| 摘要 |
<p>PURPOSE:To prevent a turn over of a metal film and to reduce the generation of wrong device at a cutting off time by a method wherein lines of slits without a metal film are arranged along and at a right angle of a scrive lines of wafers which coated a metal film in the scrive region. CONSTITUTION:The metal film 2 is formed in the scrive region of the semiconductor wafer 1 for the electric characteristic, the manufacture process, or the cost reduction. Further, at the cutting off time of the wafer 1, the portion 32 without the metal film is provided along, or at the right angle of the scrive line 5 not so as to the metal film (Al etc.) would turn over and contact with a bonding wire or the wiring inside of a pellet. For instance, this slit 32 is formed by the etching. Thus, the generation of the wrong device can be prevented.</p> |
