| 摘要 |
PURPOSE:To enhance the degree of freedom of circuit design as well as to enable to easily manufacture an integrated circuit device by a method wherein a resistance region is formed on the region, which will be connected to an electrode and performs function as a resistor, in accordance with the desired function to be performed by conducting an ion implantation, and a wiring with which a circuit element and a resistance region will be connected is formed. CONSTITUTION:An electrode part 4, to be used to obtain ohmic contact, is formed in advance on the resistance region 5 of a substrate whereon a resistor will be formed without performing a diffusion treatment for a resistance element. On the above-mentioned substrate whereon the electrode 4 only is formed, a resistance element 6 which will be practically turned to a resistor is formed connecting to the electrode 4 for the purpose of obtaining the desired function by performing an ion implantation in the wiring process to be performed on transistors and the like prior to the performance of the wiring process. The integrated circuit having the desired circuit function by providing a wiring on the wafer whereon a resistance element 6 is formed in the same manner as before. As said ion implantation is used for the manufacture of the resistance element only, no consideration of resistance element is necessary for the substrate, the range of selection of the value of sheet resistance is enlarged, thereby enabling to utilize the devie having suitable value in accordance with the usage of IC. |
