| 摘要 |
PURPOSE:To obtain an electrode of a fine pattern by a method wherein the first resin, an insulating material layer and the second photosensitive resin of desired pattern are laminated successively and an window on the first resin is enlarged after the two layers underneath it have been selectively removed using the second resin as a mask. CONSTITUTION:An N type GaAs layer 2, the first photosensitive layer resin 3, an Si3N4 film 4 and the second photosensitive resin layer 5 are laminated successively, and the resin 5 are exposed and developed into a desired pattern. Using this pattern 5 as a mask, films 4 and 3 are selectively etched successively using a reacting sputtering method, the windows 3 and 5 are enlarged by exposing films 4 and 3 in O2 plasma, a gold layer 7 is coated and the resin 3 is removed. As a result, a fine electrode pattern can be formed using lift-off method. |
