发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the expansion of a base and improve a characteristic of noise by a method wherein a base layer deeper than an emitter and high concentration diffusion having the same polarity are formed to the base. CONSTITUTION:The deep n<+> high concentration diffusion layer 13 having polarity the same as the base 4 is made up. A characteristic of noise can be improved because a resistance value of a resistor 12 among resistance values forming base expansion resistors r can be reduced by making up the n<+> high concentration diffusion layer 13. Preferably, the n<+> high concentration diffusion layer 13 is ideally built up in a shape that is deep up to depth connected to a n<+> buried region 2.
申请公布号 JPS5643760(A) 申请公布日期 1981.04.22
申请号 JP19790120574 申请日期 1979.09.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMADA TOMOU
分类号 H01L29/73;H01L21/331;H01L29/72 主分类号 H01L29/73
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