发明名称 |
A SEMICONDUCTOR DEVICE HAVING METAL WIRING LAYERS |
摘要 |
A semiconductor device including a semiconductor substrate (1); a metal wiring layers (31) formed on the semiconductor substrate; a first insulation layer (411) formed on the metal wiring layer (31), the first insulation layer (411) being formed by a tensile stress insulation layer having a contracting characteristic relative to the substrate; and a second insulation layer (412) formed on the first insulation layer (411), the second insulation layer (412) being formed by a compressive stress insulation layer having an expanding characteristic relative to the substrate. The tensile stress insulation layer (411) is produced by thermal chemical vapor deposition or plasma assisted chemical vapor deposition which is performed in a discharge frequency range higher that 2 megahertz; and the compressive stress insulation layer (412) is produced by plasma assisted chemical vapor deposition which is performed in a discharge frequency range lower than 2 megahertz. |
申请公布号 |
EP0525824(A3) |
申请公布日期 |
1993.03.10 |
申请号 |
EP19920115068 |
申请日期 |
1988.08.17 |
申请人 |
FUJITSU LIMITED |
发明人 |
ITOH, JUNICHI;KURITA, KAZUYUKI |
分类号 |
H01L23/522;H01L21/31;H01L21/318;H01L21/768;H01L23/532;(IPC1-7):H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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