| 摘要 |
A method of forming a semiconductor device includes depositing a boron doped amorphous silicon layer on a substrate having many steps, projections or cavities, by thermal decomposition of a higher order silane gas eg Si2H6orSi3H8 and diborane gas at 150 DEG -450 DEG C. The diborane gas may be supplied to the substrate in a reaction limited. At least one of O2, N2O, NH3, N2 or NF3 may be added to the reactants. The thermal decomposition may be carried out at 0.01-0.2 Torr. An insulator layer may first be formed on substrate which is etched to form a contact hole prior to deposition of the doped silicon. Alternatively after first forming a conductor element the doped silicon layer may be etched, an insulating layer applied, a contact hole formed in the insulating film to expose the first conductor element, the contact hole refilled and a second conductor element formed thereon. A dynamic RAM may be produced by forming a trench on a substrate, forming a MOSFET having source/drain region and a switching transistor on the substrate, then forming a plate electrode through a capacitor insulating layer formed of the doped silicon, prior to annealing to a polysilicon layer. |
