发明名称 |
Etching rate determining method and apparatus. |
摘要 |
The etching ability of an etchant for a metal part is monitored by accurately measuring the etching rate with a relatively simple arrangement. The etching rate is determined by channelling a portion of the etchant from an etching tank (4) to a reaction chamber (1), etching a specimen (8) of the same material as a metal part with the etchant portion in the reaction chamber (1), collecting hydrogen gas generated during etching of the specimen, measuring the time taken until a predetermined quantity of hydrogen gas is generated, and computing the etching rate from the measured time. <IMAGE>
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申请公布号 |
EP0531149(A2) |
申请公布日期 |
1993.03.10 |
申请号 |
EP19920308042 |
申请日期 |
1992.09.04 |
申请人 |
C. UYEMURA & CO, LTD |
发明人 |
HASHIMOTO, SHIGEO, C. UYEMURA & CO., LTD.;KAWASAKI, SHOGO, C. UYEMURA & CO., LTD. |
分类号 |
C23F1/00;C23F1/08;G01N7/14;G01N7/18 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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