Semiconductor integrated circuit device produced by charged-particle etching

摘要

A semiconductor integrated circuit device formed on the basis of the design rules of 0.5 mu m or less contains a MOS transistor. The MOS transistor is formed at the main surface region of the semiconductor substrate. If the effective gate area of the MOS transistor is S2 and the area of a contact hole made in an interlayer insulating film on the gate electrode of the MOS transistor is S1, the relationship expressed as S1/S2