发明名称 |
Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method |
摘要 |
A process for forming a high quality polycrystalline semiconductor film on an insulating substrate which comprises using a MW-PCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber and introducing said plasma into said film-forming chamber while applying a high frequency voltage with a frequency in the range of from 20 to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of said polycrystalline semiconductor film on said insulating substrate maintained at a desired temperature.
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申请公布号 |
US5192717(A) |
申请公布日期 |
1993.03.09 |
申请号 |
US19910799900 |
申请日期 |
1991.12.02 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KAWAKAMI, SOICHIRO;KANAI, MASAHIRO;AOKI, TAKESHI |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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