发明名称 |
Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell |
摘要 |
A memory cell is disclosed which comprises a filament channel transistor and a ferroelectric capacitor formed on a surface of a semiconductor substrate. The transistor comprises a substantially cylindrical channel filament which is formed substantially perpendicular to the substrate surface between the surface and the capacitor. The capacitor comprises a storage layer which can be formed of a ferroelectric material such that the memory cell is nonvolatile. The storage layer may also comprise a high dielectric material such that the memory cell is operable as a dynamic random access memory cell.
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申请公布号 |
US5192704(A) |
申请公布日期 |
1993.03.09 |
申请号 |
US19920874280 |
申请日期 |
1992.04.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCDAVID, JAMES M.;CLARK, DAVID R. |
分类号 |
G11C11/22;G11C11/404;H01L27/115 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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