发明名称 |
Method for producing a semiconductor laser device |
摘要 |
A visible light semiconductor laser device has a double heterojunction structure comprising AlGaInP series semiconductors which is produced on a substrate having an electrode on its rear surface. A a p type GaInP buffer layer is provided between a p type GaAs contact layer and a p type AlGaInP cladding layer. The buffer layer has a constant composition ratio and the energy band gap is smaller at the side of the p type GaAs contact layer than at the p type AlGaInP cladding layer. Thus, an energy band discontinuity between the p type GaAs contact layer and the p type AlGaInP cladding layer are relaxed for operation of the laser at low voltage. The laser is produced by varying the growth conditions, such as temperature or V/III ratio during growth, of the buffer layer to vary the energy band gap within the buffer layer.
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申请公布号 |
US5192711(A) |
申请公布日期 |
1993.03.09 |
申请号 |
US19920822662 |
申请日期 |
1992.01.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MURAKAMI, TAKASHI;KANENO, NOBUAKI |
分类号 |
H01S5/042;H01S5/223;H01S5/32;H01S5/323 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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