| 摘要 |
A semiconductor stacked CMOS device in which gate electrodes are laid on the upper and lower sides of an upper MOS FET, and a gate oxide film of the upper MOS FET is formed by oxidizing polycrystalline Si film having a low impurity concentration, wherey the current drive capability and the insulative proof-voltage can be enhanced. Further, the polycrystalline Si is formed on a silicon nitride film or a silicon oxide film having a less surface roughness, and accordingly, the lower surface of the polycrystalline Si has also a less surface roughness, whereby it is possible to further enhance the insulative proof-voltage.
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