| 摘要 |
A semiconductor light-emitting element includes a current pinching type semiconductor light-emitting element main body, which utitlizes light extracted from a surface parallel to a light-emitting layer, and a light-shielding film, which is locally or entirely coated on a side surface of the semiconductor light-emitting element main body to be elelctrically insulated therefrom. A method of manufacturing a semiconductor light-emitting element, includes the steps of preparing a wafer by sequentially stacking and forming a current blocking layer, a first cladding layer, an active layer, a second cladding layer, and a first ohmic electrode on one surface of a substrate, and forming a second ohmic electrode on the other surface of the substrate, forming a resist film on the major surface of the wafer, forming a plurality of grooves reaching at least the first cladding layer at predetermined positions on the resist layer, coating an electrical insulating film on the resist film including the grooves, and coating a light-shielding layer on the electrical insulating film, removing the electrical insulating film, the light-shielding film, and the resist film so as to leave the electrical insulating film and the light-shielding film in portions of the grooves, and cutting the wafer at the portions of the grooves.
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