发明名称 |
Method of making tungsten contact core stack capacitor |
摘要 |
The invention is a product and method for forming the same comprising a storage contact capacitor of a DRAM device wherein the storage node capacitor plate comprises first and second capacitor portions. The first portion is a self-aligned Tungsten and TiN core. In a first embodiment the second portion is a storage node polysilicon deposited and subjected to an insitu phosphorus diffusion doping. In a second embodiment the second portion comprises tungsten fingers formed elevationally and horizontally to overlie the tungsten and TiN core. Portions of TiN provide spacing between adjacent tungsten fingers. An upper polysilicon layer functions as the upper capacitor plate and is insulated from the lower capacitor plate by a dielectric layer.
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申请公布号 |
US5192703(A) |
申请公布日期 |
1993.03.09 |
申请号 |
US19910786242 |
申请日期 |
1991.10.31 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LEE, ROGER R.;GONZALEZ, FERNANDO |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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