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发明名称
Field effect transistor and method of fabricating
摘要
申请公布号
US5192696(A)
申请公布日期
1993.03.09
申请号
US19920821518
申请日期
1992.01.15
申请人
GTE LABORATORIES INCORPORATED
发明人
BULAT, EMEL S.;HERRICK, CHARLES
分类号
H01L29/80;H01L21/335;H01L29/772
主分类号
H01L29/80
代理机构
代理人
主权项
地址
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