| 摘要 |
PURPOSE:To attain satisfactory adhesive strength between Cr and Cu by applying a sputtering sequence in which Cr and Cu are continuously sputtered without carrying out presputtering between the sputtering stages in the titled apparatus for continuously forming Cr and Cu films. CONSTITUTION:When Cr and Cu films are formed by a sputtering method, a sputtering sequence shown by the figure is applied. Cu presputtering and Cr presputtering for cleaning Cu and Cr targets are successively carried out, and Cr and Cu films are continuously formed on a substrate by sputtering normally the cleaned Cr and Cu targets without carrying out presputtering between the sputtering stages. By this method, the formation of an impurity film on the interface between Cr and Cu can be prevented by a time factor, and the oxidation of Cr can be prevented after forming the Cr film, so satisfactory adhesive strength between Cr and Cu is attained. |
