| 摘要 |
PURPOSE:To improve the performance of a semiconductor device in a fin-shaped structure for use in a storage node of a capacitor of a DRAM by preventing the outer peripheral part of a fin from making contact with a semiconductor substrate. CONSTITUTION:There are successively formed a SiO2 film 12 and a Si3N4 film 13 on the surface of an Si substrate 11. After the SiO2 film is formed on the surface of the Si3N4 film 13, a fin-shaped opening is formed through the SiO2 film. After the SiO2 film is formed over the entire surface of the substrate, a contact window 17 is opened at the center of the opening part. After a polysilicon layer is deposited over the entire surface of the substrate, it is patterned into a fin shape. The SiO2 film on the Si3N4 film 13 is removed. There is thus established a fin-shaped structure where only the peripheral part of the fin 18 is deformed oppositely to the surface of the Si substrate 11. |
