| 摘要 |
PURPOSE:To realize high integration and to improve reliability in a manufacture method of a semiconductor device having a capacitance element. CONSTITUTION:A tantalum tungsten film 12 containing tantalum is formed on a lower electrode 11, the tantalum tungsten film 12 is selectively oxidized in mixed gas of hydrogen and water vapor and a charge storage insulating film 14 is formed of an tantalum oxide film. After the charge storage insulating film is formed of the tantalum oxide film on the tantalum/tungsten film 14, it is oxidized. Thereby, the charge storage insulating film 14 can be formed of a single layer film of an tantalum oxide film. Dielectric breakdown strength of the charge storage insulating film 14 can be also improved. |
