| 摘要 |
PURPOSE:To provide high resistance by forming a wiring part on an electrode contact part and forming a high resistance layer of a thin polycrystalline silicon film on an electrode contact part. CONSTITUTION:A polycrystalline Si layer 2 is first formed on a first insulating film 1. Hereupon, the polycrystalline Si layer 2 must be low resistance and hence impurity such as As is added at high concentration. Then, a high resistance part opening 10 is formed by etching and removing the polycrystalline Si layer only for a high resistance part region other than a wiring region in the polycrystalline Si layer 2. Successively, a thin high resistance layer polycrystalline Si layer 3 not involving impurity is formed over the entire surface of a Si substrate including the high resistance part opening 10. Further, a second insulating film 4 is formed over the entire surface of the polycrystalline Si layer 3 including the high resistance part opening 10 and a second insulating layer in the wiring region is rendered to photoetching to form an electrode contact part 11. Finally, a metal layer 5 is formed on the electrode contact part 11 whereby high resistance by the thin polycrystalline Si layer 3 is fabricated. |
