| 摘要 |
<p>PURPOSE:To reduce the resistance of a wiring film by providing a step of depositing a high fisuble metal silicide film as a wiring material, a gate electrode material of a thin film transistor, a step of performing a photolithography, and a step of heat treating. CONSTITUTION:In an active matrix element formed on a glass board, a wiring film 102 between elements is formed directly on the board 101, or formed after a silicon dioxide layer 101 to become an insulating film is formed by a sputtering method, a chemical vapor growing method, a thermally oxidizing method, etc., when an element and a wiring film except the wiring film exist under the wiring film. When a high fusible silicide film formed by a sputtering method and a chemical vapor growing method such as molybdenum silicide, titanium silicide, tantalum silicide, etc., is used as the film 102, only the part to become the wiring 102 allows to remain by photolithography, an opening 104 is formed in the step of heat treating after the high fusible silicide is etched.</p> |
