| 摘要 |
PURPOSE:To improve a throughput, by forming respectively the places for forming offset drains of respective thin film transistors on the sides of the same direction as that of the gate electrode of the respective thin film transistors, and by eliminating the processes for forming masks, and further, by reducing respective manufacturing processes. CONSTITUTION:In a static RAM 1, A memory cell is constituted with a flip-flop 11 computing a pair of inverter 15, 16 and the load elements of the respective inverter 15, 16 are formed with thin film transistors 19, 20. In the static RAM 1, offset drains 23, 24 of the respective thin film transistors 19, 20 are provided respectively on the sides of the same directions as that of the gate electrode 21, 22 of the respective thin film transistors 19, 20. |
