发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent wings from making contact with each other, keeping a multi- layered wing-shaped storage electrode surface intact by disposing said multi-layered wing-shaped storage electrode such that lengths of the wings of respective layers are complementary to each other and the total sum of the wing lengths of each layer are substantially equal to each other. CONSTITUTION:In a storage electrode 9 composed of wings of first, second, and third layers located in the upward order from a Si substrate 1, there are arranged next to each other a storage electrode where a first layer wing length is longest and lengths of more upper layers are progressively shorter, and a storage electrode where a first layer wing length is shortest and lengths of more upper layers are progressively longer. The total sum of wing lengths of the first, second, and third layers of the adjacent storage electrodes are substantially equal to each other. Since the wing lengths of the storage electrodes of the respective layers are not equal to each other, the wing lengths must be patterned for each layer. Further, since there is greater the probability that the longer wings are more bent than the shorter ones are, even in a structure where the wing length of the second layer is more increased than that of the third layer is, the wing of the third layer is substantially prevented from making contact with that of the second layer owing to the former's being bent.
申请公布号 JPH0555507(A) 申请公布日期 1993.03.05
申请号 JP19910209680 申请日期 1991.08.22
申请人 FUJITSU LTD 发明人 IZAWA TETSUO;IKEMASU SHINICHIROU
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
代理机构 代理人
主权项
地址