| 摘要 |
PURPOSE:To increase capacitance of a DRAM memory cell but reduce a cell area. CONSTITUTION:A memory cell is constructed such that a capacitor composed of conductor films 1, 3 and an insulating film 2 is disposed on a MOSFET composed of a drain 4, a gate 5, and a source 6. The capacitor is disposed such that the conductor films 1, 3 are located perpendicularly to a silicon substrate 10, and is connected with a source 4 at the side of the semiconductor film 1. The capacitor is fabricated in a process different from that of the transistor, and the side of the layered capacitor is connected with a connecting conductor 9 on the substrate 10. |
