| 摘要 |
PURPOSE:To obtain the method with which a high resolution and high depth of focus are obtainable regardless of the numerical aperture of an exposing device being put to practicable use and having high stability and forms fine patterns by using such exposing device. CONSTITUTION:An ordinary thick 1st resist film 2, a thin 1st photocolor fadable film 3, a thin 2nd resist film 4, and a thin 2nd photo-color fadable film 5 are successively formed on a substrate 1. These films are subjected to 1st exposing by g rays via a mask 6 and are then developed to form mask patterns directly on the mask. The films are then subjected to uniform exposing over the entire surface by the g-line with the mask patterns right above these patterns as a mask and are developed to form the desired mask patterns on the substrate. |
