| 摘要 |
PURPOSE:To prevent a characteristic of a thin film transistor (TFT) from deteriorating, by preventing the generation of hot carriers which are caused by the electric field between the end part of the gate electrode of the TFT and its drain region. CONSTITUTION:A sidewall spacer 9 is formed on the sidewall of the end part of a gate electrode 8 of a p-channel TFT, which is used as the load transistor of a complete-CMOS-type memory cell. Thereby, relaxed is the electric field formed between the end part of the gate electrode 8 and a drain region 13 formed in a polycrystal silicon film 11, which is so formed as to cover the end part of the gate electrode 8. |
