THIN FILM TRANSISTOR ELEMENT, MANUFACTURE THEREOF AND LIQUID CRYSTAL DISPLAY

摘要

PURPOSE:To form electrodes without using a vacuum device by a method wherein the respective electrodes are formed in a devacuum state. CONSTITUTION:A thin film transistor element is provided with a conductive layer 2 formed on a glass substrate 1, an amorphous silicon active layer 3 formed on the layer 2, a gate electrode 5 formed on the layer 3 via a gate insulating film 4 and drain and source electrodes 9a and 9b formed on the layer 3 via an N<+> amorphous silicon layer 7 and the respective electrodes are deposited by a DC plating method.