| 摘要 |
PURPOSE:To avoid the influence of the proximity effect and form a fine precise resist pattern. CONSTITUTION:This method for manufacture consists of the following four processes: (1) Process to heap the first resist 2 on a substrate 1, (2) process to expose and develop the first resist 2 to form the first resist pattern 2a, (3) process to heap either resist of type, positive or negative, opposed to that of the first resist 2 or negative resist on the substrate 1 as the second resist 3, and (4) process to expose and develop the second resist 3 to form the second resist pattern 3a and then form a resist pattern 4a, the synthetic of the first resist pattern 2a and the second 3a. |
